power f-mos fets 2sk758 2SK2324 (tentative) silicon n-channel power f-mos n features l avalanche energy capability guaranteed l high-speed switching l low on-resistance l no secondary breakdown n applications l non-contact relay l solenoid drive l motor drive l control equipment l switching mode regulator n absolute maximum ratings (tc = 25?c) parameter drain-source breakdown voltage gate-source voltage drain current dc pulse avalanche energy capability allowable power t c = 25?c dissipation ta= 25?c channel temperature storage temperature symbol v dss v gss i d i dp eas * p d t ch t stg rating 600 30 2 4 10 2 40 150 C55 to +150 unit v v a a mj w ?c ?c n electrical characteristics (tc = 25?c) parameter drain-source cut-off current gate-source leakage current drain-source breakdown voltage gate threshold voltage drain-source on-resistance forward transadmittance diode forward voltage input capacitance output capacitance feedback capacitance turn-on time (delay time) rise time fall time turn-off time (delay time) channel-case heat resistance channel-atmosphere heat resistance symbol i dss i gss v dss v th r ds(on) | y fs | v dsf c iss c oss c rss t d(on) t r t f t d(off) r th(ch-c) r th(ch-a) condition v ds = 480v, v gs = 0 v gs = 30v, v ds = 0 i d =1ma, v gs = 0 v ds = 25v, i d =1ma v gs =10v, i d =1a v ds = 25v, i d =1a i dr = 2a, v gs = 0 v ds = 20v, v gs = 0, f=1mhz v dd = 200v, i d =1a v gs =10v, r l = 200 w min 600 2 0.5 typ 4.9 0.85 260 35 10 15 25 35 35 max 100 1 5 6 C1.6 3.125 62.5 unit a a v v w s v pf pf pf ns ns ns ns ?c/w ?c/w unit : mm 1 : gate 2 : drain 3 : source to-220e package * l= 5mh, i l = 2a, 1 pulse 9.9 0.3 23 1 4.6 0.2 2.9 0.2 2.6 0.1 2.54 0.2 0.75 0.1 1.2 0.15 5.08 0.4 15.0 0.3 13.7 +0.5 -0.2 ?.2 0.1 3.0 0.2 8.0 0.2 4.1 0.2 solder dip 1.45 0.15 0.7 0.1 7? free datasheet http:///
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